l/^roaueti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 plastic medium-power coplementary silicon transistors ...designed for general-purpose amplifier and low speed switching applications features: * collector-emitter sustaining vortege- = m v ' t1p110.tip1 15 - 80 v (min) - tip1 1 1 ,tip1 16 - 1 00 v (min) - tip11 2.tip1 1 7 * collector-emitter saturation voltage vch?? = 2-5 v (max.) ? lc = 2.0 a * monolithic construction with built-in base-emitter shunt resistor maximum ratings characteristic collector-emitter voltage coiiector-base voltage emitter-base voltage collector current-continuous -peak base current total power dissipation @tc= 25c derate above 25c operating and storage junction temperature range symbol vceo vcbo "ebo ?o u ib pd tj 'tsto TIP110 tip115 60 60 tip111 tip116 80 80 tip112 tip117 100 100 5.0 2.0 4.0 50 50 0.4 -65 to +150 unit v v v a ma w w/c c npn pnp TIP110 tip115 tip111 tip116 tip112 tip117 2.0 ampere darlington complementary silicon power transistors 60-100 volts 50 watts thermal characteristics characteristic thermal resistance junction to case symbol rejc max 2.5 unit c/w power dbsipatk>n(watts) no s8&! sttfeftg *l figure -1 power derating x x x x \ x x x ) 25 50 75 100 125 150 tc , temperaturecc) to-220 ---l pin 1.base 2.collector s.emftter 4.collector(case) dim a b c d e f g h i j k l m o millimeters min 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.20 0.33 2.48 3.70 max 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.96 1.38 2.97 0.55 2.98 3.90 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
TIP110,tip111,tip112npn / tip115, tip116, tip117 pnp electrical characteristics ( tc = 25'c unless otherwise noted ) characteristic symbol min max untt off characteristics collector - emitter sustaining voltage (1) (lc = 30majb = 0) TIP110.tip115 tip111,tip116 tip112.tip117 collector cutoff current (ve = 30v, l. = 0 ) TIP110.tip115 (vci = 40v, l. = 0 ) tip111,tip116 (vce = sov, ib = 0 ) tip112.tip117 collector cutoff current (vc1 = 60v, ls = 0 ) TIP110.tip115 (vcb = 80v. ib = 0 ) tip111,tip116 (vc1 = 100v,ie = 0 ) tip112.tip117 emitter cutoff current (veb = 5.0v,ic=0 ) w vceo(h?) iceo icbo iebo 60 80 100 2.0 2.0 2.0 1.0 1.0 1.0 2.0 v ma ma ma on characteristics (1) dc current gain (ic = 1.0a, vce = 4.0v) (ic = 2.0a,vce = 4.0v) collector-emitter saturation voltage ( lc = 2.0 a, ib = 8.0 ma ) base-emitter on voltage ( l = 2.0 a, vce = 4.0 v ) ^ \r -i \+f r hfe vce(iat) v? 1000 500 2.5 2.8 v v dynamic characteristics small-signal current gain ( lc = 0.75 a,vce= 10 v, f = 1.0 mhz ) output capacitance (vcbmov, |. = 0 ,f = 0.1 mhz) TIP110,tip111,tip112 tip115,tip116,tip117 h" cob 25 250 150 pf (1) pulse test pulse width = 300 us , duty cycle s 2.0% npn TIP110 tip111 tip112 internal schematic diagram |c pnp ~i"."~ "1 tip115 r tip116 tip117
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